Abstract:Pseudobinary solid−solution semiconductor nanowires made of (GaP)_1−x(ZnS)_x, (ZnS)_1−x(GaP)_x and (GaN)_1−x(ZnO)_x were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid−solution nanostructures. Electrical transport measurements on individual GaP and (GaP)_1−x(ZnS)_x nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.

https://doi.org/10.1021/nl303501t