Abstract:Pseudobinary solid−solution semiconductor nanowires made of (GaP)1−x(ZnS)x, (ZnS)1−x(GaP)x and (GaN)1−x(ZnO)x were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid−solution nanostructures. Electrical transport measurements on individual GaP and (GaP)1−x(ZnS)x nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.

https://doi.org/10.1021/nl303501t