Education: Doctoral degree
Degree: PhD
Status: Graduated
Thesis title: Morphology and band gap modulation of (GaN)1-x(ZnO)x nanomaterials and photocatalytic performance study
Research Direction: Semiconductor Photocatalysis
Graduate school: Tohoku University
Introduction: Semiconductor photocatalysis is one of the effective methods to solve energy and environmental problems, however, the core essence and the main problem is to research and develop semiconductor photocatalysts with efficient light absorption and photocatalytic efficiency. The research of (GaN)1-x(ZnO)x semiconductors is focused on the synthesis of low-dimensional solid-solution nanomaterials to reduce the compounding efficiency of photogenerated carriers and to increase the visible light absorption and photocatalytic activity area in order to obtain higher photocatalytic activity. The main results include: (1) Based on the growth thermodynamics and kinetics of the chemical vapor deposition reaction process, the synergistic regulation of solid solution nanostructure solid solution degree, forbidden band width and growth crystal surface was achieved through the regulation of the reaction process parameters, revealing the crystal surface evolution law and the interrelationship between solid solution degree, crystal surface and photocatalytic performance. (2) The addition of metal catalysts reduces the size of solid-solution nanowires, thus increasing the catalytic specific surface area and photogenerated carrier migration efficiency. The key factors affecting the photocatalytic performance of nanowires are elucidated, and a theoretical basis is laid for the design and preparation of photocatalytic materials for hydrogen production by photolysis. (3) The evolution of ZnGa2O4 two-dimensional nanosheets from cubic to hexagonal orientation and the elucidation of its structural evolution law were prepared by the template method with an average layer thickness of 14 nm, and the photocatalytic decomposition of aquatic hydrogen was achieved by Rh modification.
Entrance date: 2013-09-01
Graduation date: 2018-06-30
Email: 15927236072@163.com